JPH0361335B2 - - Google Patents

Info

Publication number
JPH0361335B2
JPH0361335B2 JP57136262A JP13626282A JPH0361335B2 JP H0361335 B2 JPH0361335 B2 JP H0361335B2 JP 57136262 A JP57136262 A JP 57136262A JP 13626282 A JP13626282 A JP 13626282A JP H0361335 B2 JPH0361335 B2 JP H0361335B2
Authority
JP
Japan
Prior art keywords
layer
growth
semiconductor substrate
single crystal
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57136262A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5927521A (ja
Inventor
Yutaka Kobayashi
Takaya Suzuki
Akira Fukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13626282A priority Critical patent/JPS5927521A/ja
Publication of JPS5927521A publication Critical patent/JPS5927521A/ja
Publication of JPH0361335B2 publication Critical patent/JPH0361335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP13626282A 1982-08-06 1982-08-06 半導体基体の製法 Granted JPS5927521A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13626282A JPS5927521A (ja) 1982-08-06 1982-08-06 半導体基体の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13626282A JPS5927521A (ja) 1982-08-06 1982-08-06 半導体基体の製法

Publications (2)

Publication Number Publication Date
JPS5927521A JPS5927521A (ja) 1984-02-14
JPH0361335B2 true JPH0361335B2 (en]) 1991-09-19

Family

ID=15171069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13626282A Granted JPS5927521A (ja) 1982-08-06 1982-08-06 半導体基体の製法

Country Status (1)

Country Link
JP (1) JPS5927521A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0279445A (ja) * 1988-09-14 1990-03-20 Oki Electric Ind Co Ltd 素子分離領域の形成方法
US6884701B2 (en) * 1991-04-27 2005-04-26 Hidemi Takasu Process for fabricating semiconductor device
JP3086836B2 (ja) * 1991-04-27 2000-09-11 ローム株式会社 半導体装置の製造方法
JP4743611B2 (ja) * 2006-02-16 2011-08-10 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135571A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Vapor phase growth method for semiconductor
JPS5583227A (en) * 1978-12-20 1980-06-23 Matsushita Electronics Corp Epitaxial growing
JPS57115822A (en) * 1981-01-08 1982-07-19 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5927521A (ja) 1984-02-14

Similar Documents

Publication Publication Date Title
US5373803A (en) Method of epitaxial growth of semiconductor
DE69133183T2 (de) Silizium auf porösen silizium, verfahren zur herstellung und produkt
JP3182893B2 (ja) 薄膜トランジスタの製造方法
JPH0473619B2 (en])
JPS6249729B2 (en])
US3773566A (en) Method for fabricating semiconductor device having semiconductor circuit element in isolated semiconductor region
JPH0132648B2 (en])
JPH0361335B2 (en])
JPS5918196A (ja) 単結晶薄膜の製造方法
KR930010093B1 (ko) 반도체박막의 형성방법
CA1184020A (en) Method of manufacturing semiconductor device
JPH0319218A (ja) Ｓｏｉ基板の作成方法及び作成装置
US5786261A (en) Method for fabricating semiconductor device having device isolation layer
JPS61174621A (ja) 半導体薄膜結晶の製造方法
JPH0810669B2 (ja) Ｓｏｉ膜の形成方法
JPS6134921A (ja) 半導体装置の製造方法
JP2500315B2 (ja) 半導体単結晶層の製造方法
JPH05206520A (ja) ｐ型ＩＩ−ＶＩ族化合物半導体の製造方法
JPS5935426A (ja) 半導体装置の高濃度不純物拡散法
JPS59228713A (ja) 半導体装置の製造方法
JPH01162327A (ja) 化合物半導体の成長方法
JPS63248796A (ja) 分子線エピタキシヤル成長方法及び成長装置
JPH0396223A (ja) Ｓｏｉ構造の形成方法
JPS6054427A (ja) 半導体装置の製造方法
JPS59181609A (ja) 半導体装置の製造方法